# Seoul National University capacitor switches at 0.6 V, no breakdown over 1 trillion cycles

- Published: 2026-11-06 00:37 UTC
- Section: Machines & Making › Electronics
- Tags: ferroelectric capacitor, hafnium zirconium oxide, 0.6 volts switching, one trillion cycles, DRAM refresh, titanium nitride electrode, polarization switching, Nature Communications, 1T1C memory cell
- URL: https://realtech.media/news/rt-c6c775be3a59df3d18b1ee78_seoul_national_university/

**In a component-level test, a 5 nm hafnium zirconium oxide capacitor switched at 0.6 V. The result targets low-power, fast, durable memory, not a finished chip.**

![Seoul National University capacitor switches at 0.6 V, no breakdown over 1 trillion cycles](https://sgzwpqqelzmajkcubgkl.supabase.co/storage/v1/object/public/rt-media/2026/11/a7928a99cb120c4e.jpg)
*Steve Jurvetson, Wikimedia Commons, CC BY 2.0*

A team led by Min Hyuk Park at Seoul National University reported a ferroelectric memory capacitor that switched between information states at 0.6 volts and remained distinguishable after one trillion switching cycles without hard electrical breakdown, according to knowridge.com [1]. The work appeared in Nature Communications. Collaborators included Hanyang University, Pohang Accelerator Laboratory and Samsung Electronics [1].

The study demonstrates a single component, not a finished replacement for today's computer memory [1].

## Why ferroelectric memory

Conventional DRAM stores information as electrical charge in capacitors. Because that charge leaks away, the memory must be refreshed repeatedly, which adds to energy use even when data is only being retained [1].

Ferroelectric materials represent information differently: by the direction of their internal electrical polarization. That orientation can remain after the applied field is removed, which could reduce the burden of charge refresh [1].

## Interface engineering and measured results

The researchers used a five-nanometer layer of hafnium zirconium oxide, a material compatible with important semiconductor processes. They focused on its boundary with the titanium nitride electrode, where unwanted oxidation can waste applied voltage [1].

By controlling the electrode's structure and surface chemistry, the team produced a thinner, more uniform interface. According to the report, more of the applied voltage then acted on the ferroelectric layer, and polarization switched more consistently [1].

Switching half of the total polarization took about 42 nanoseconds at 0.6 volts and about eight nanoseconds at one volt [1]. No hard electrical breakdown was observed through a trillion cycles. With a stricter criterion of less than 20% polarization loss, endurance was 600 billion cycles at 0.6 volts and a trillion cycles at one volt [1].

The team also examined a memory cell with one transistor and one capacitor. Circuit modeling suggested how polarization could preserve a readable distinction after stored charge declined, and a test array examined devices sharing a common electrode [1].

## Limits of the result

Predictions of faster switching at smaller dimensions are extrapolations, not direct measurements of a complete memory chip. Retention, manufacturing consistency and operation within practical circuits also need to be considered alongside the cycle count [1].

The work offers a design strategy: engineering the interface improved speed and endurance together without relying only on higher voltage [1].

## Sources

1. [knowridge.com](https://knowridge.com/2026/11/low-voltage-memory-component-survives-a-trillion-switches-without-electrical-breakdown/)
2. [Interesting Engineering](https://interestingengineering.com/innovation/ferrolectric-memory-capacitor-trillion-cycles)

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Source: RealTech, realtech.media — https://realtech.media/news/rt-c6c775be3a59df3d18b1ee78_seoul_national_university/