# Huazhong University: AlScN ferroelectric transistors with IGO channel show 20.6 V memory window in lab devices

- Published: 2026-11-05 02:44 UTC
- Section: Machines & Making › Electronics
- Tags: wurtzite ferroelectric transistor, aluminum scandium nitride, indium gallium oxide channel, MFMIS structure, memory window 20.6 V, multilevel storage 6-bit, interface trap density, annealing-free FeFET, neuromorphic hardware, back-end-of-line compatibility
- URL: https://realtech.media/news/rt-14e0cfbe0541753c5d29d4a7_huazhong_university_alscn/

**Ferroelectric transistors on wurtzite AlScN with an ultrathin IGO channel reached a 20.6 V memory window, 10^6 endurance and 64 states. The MFMIS structure lowered interface trap density.**

![Huazhong University: AlScN ferroelectric transistors with IGO channel show 20.6 V memory window in lab devices](https://sgzwpqqelzmajkcubgkl.supabase.co/storage/v1/object/public/rt-media/2026/11/b1e254a9514513a8.jpg)
*KenShirriff, Wikimedia Commons, CC BY-SA 4.0*

A team from Huazhong University of Science and Technology (Wuhan) and The Hong Kong Polytechnic University has reported ferroelectric field-effect transistors (FeFETs) built on wurtzite aluminum scandium nitride (AlScN) with an ultrathin indium gallium oxide (IGO) channel. The paper, which describes annealing-free devices for neuromorphic computing, appeared in Nature Communications on 3 November 2026. According to the authors, the best of three tested structures reached a memory window of up to 20.6 V and an endurance of 10^6. [1]

## Why AlScN and what limits it

Wurtzite AlScN ferroelectrics are considered candidates for non-volatile memory (NVM). The reasons given are a high remanent polarization (Pr above 100 μC·cm−2) and compatibility with back-end-of-line (BEOL) processes. [1]

At the same time, the authors note that building high-performance wurtzite FeFETs remains a significant challenge. The obstacles are a high interface trap density (Dit) and a large variation of threshold voltage (VTH). [1]

To examine this, the group made AlScN FeFETs with an ultrathin IGO channel in three different structures. The authors report that polarization switching in these structures follows distinct mechanisms. [1]

## Results for the MFMIS structure

FeFETs with a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure showed high interface quality with low Dit and a stable VTH, according to the authors. In this structure the memory window reached 20.6 V, and the endurance was 10^6. [1]

The devices also operated stably in a 6-bit mode with 64 distinct states. The authors present this as evidence that the devices are feasible for multilevel storage. [1]

The team further demonstrated the use of the FeFET in neuromorphic networks, with a recognition accuracy of 93.02%. [1]

The work is a laboratory study of individual devices. Device fabrication used a magnetron sputtering system at the Wuhan National Laboratory for Optoelectronics. The corresponding authors are Yang Chai and Xuefei Li.

## Sources

1. [Nature Communications](https://doi.org/10.1038/s41467-026-79253-7)

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Source: RealTech, realtech.media — https://realtech.media/news/rt-14e0cfbe0541753c5d29d4a7_huazhong_university_alscn/