# Researchers grow 2-inch single-crystal graphene with 2 to 5 layers on oxidized copper wafers

- Published: 2026-11-12 05:21 UTC
- Section: Machines & Making › Materials science
- Tags: single-crystal graphene, layer-controlled graphene, chemical vapor deposition, Cu(111)–Cu2O(111), Bernal stacking, rhombohedral stacking, trilayer graphene, wafer-scale 2D materials
- URL: https://realtech.media/news/rt-001299fb1cc2312c981adf4f_researchers_grow_2/

**A CVD method on Cu(111)–Cu2O(111) gives layer-controlled graphene and patterned Bernal and rhombohedral stacking in trilayers, a laboratory-scale result.**

Researchers have reported a chemical vapor deposition method for growing layer-controlled graphene on oxidized single-crystal copper wafers, according to a paper in Advanced Materials. The substrate is atomically flat and combines Cu(111) with Cu2O(111) as a heterogeneous catalytic surface. [1]

Using this substrate, the authors obtained 2-inch single-crystalline graphene films with the number of layers tuned from 2 to 5. The approach is described as synchronous and unidirectional epitaxy. [1]

By engineering the atomic steps of high-index Cu surfaces, the team created a deterministic spatial pattern of alternating Bernal and rhombohedral stacking in trilayer graphene. The stacking was confirmed by near-field nano-optics and angle-resolved photoemission spectroscopy. [1]

According to the authors, the wafer-scale films show uniform thickness, high crystallinity and an ultra-flat surface. They state that the framework addresses layer control, wafer-scale single crystallinity and stacking-order modulation together, and provides a material basis for further device studies. [1]

## Sources

1. [Advanced Materials](https://doi.org/10.1002/adma.75580)
2. [Nanowerk](https://www.nanowerk.com/spotlight/spotid=70584.php)

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Source: RealTech, realtech.media — https://realtech.media/news/rt-001299fb1cc2312c981adf4f_researchers_grow_2/